Scientists from the University of Pennsylvania have developed nanowires capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing portable memory devices such as Flash memory and micro-drives all using less power and space than current memory technologies. Ritesh Agarwal an assistant professor in the Department of Materials Science and Engineering and colleagues developed a self-assembling nanowire of germanium antimony telluride a phase-changing material that switches between amorphous and crystalline structures the key to read/write computer memory. Fabrication of the nanoscale devices roughly 100 atoms in diameter was performed without conventional lithography the blunt top-down manufacturing affect that employs strong chemicals and often produces unusable materials with space coat and efficiency limitations. Instead researchers used self-assembly a process by which chemical reactants crystallize at lower temperatures mediated by nanoscale metal catalysts to spontaneously create nanowires that were 30-50 nanometers in diameter and 10 micrometers in length and then they fabricated memory devices on silicon substrates."We measured the resulting nanowires for write-current amplitude switching go between amorphous and crystalline phases long-term durability and data retention time," Agarwal said. Tests showed extremely low power consumption for data encoding (0.7mW per bit). They also indicated the data writing erasing and retrieval (50 nanoseconds) to be 1,000 times faster than conventional Flash memory and indicated the device would not lose data even after approximately 100,000 years of use all with the potential to realize terabit-level nonvolatile memory device density."This new create of memory has the potential to alter the way we overlap information transfer data and change surface download entertainment as consumers," Agarwal said. "This represents a potential sea-change in the way we access and store data."Phase-change memory in general features faster construe/create verbally better durability and simpler construction compared with other memory technologies such as Flash. The challenge has been to reduce the size of phase change materials by conventional lithographic techniques without damaging their useful properties. Self-assembled phase-change nanowires as created by Penn researchers operate with less power and are easier to measure providing a useful new strategy for ideal memory that provides efficient and durable control of memory several orders of magnitude greater than current technologies. "The atomic scale of the nanodevices may represent the ultimate size limit in current-induced arrange convert systems for non-volatile memory applications," Agarwal said. Current solid-state technology for products like memory cards digital cameras and personal data assistants traditionally utilize Flash memory a non-volatile and durable computer memory that can be erased and reprogrammed electronically. Data on radiate drives provides most battery-powered devices with acceptable levels of durability and moderately fast data access. Yet the technology's limits are apparent. Digital cameras can't snap rapid-fire photos because it takes precious seconds to store the measure photo to memory. If the memory device is fast as in DRAM and SRAM used in computers then it is volatile; if the plug on a desktop computer is pulled all recent data entry is lost. Therefore a universal memory device is desired that can be scalable fast durable and nonvolatile a difficult set of requirements which have now been demonstrated at Penn. "create by mental act being able to store hundreds of high-resolution movies in a small control downloading them and playing them without wasting time on data buffering or imagine booting your laptop computer in a few seconds as you wouldn't need to transfer the operating system to active memory" Agarwal said. The investigate was performed by Agarwal. Se-Ho Lee and Yeonwoong Jung of the Department of Materials Science and Engineering in the educate of Engineering and Applied Science at Penn. The findings be online in the journal Nature Nanotechnology and in the October print edition. The research was supported by the Materials Research Science and Engineering bear on at Penn the University of Pennsylvania investigate Foundation award and a give from the National Science Foundation.
Whats the memory that this technology can currently hold if it were crowd produced alter now and also what would be its price?
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BLASPHEMY. I be all that times 100!!!!! Along with 1,672 hookers the Original Mr. Pibb and a fully modded TT 2008 G35 coupe.
create by mental act having an MP3 player with one of these in - & since its uber low cater consumption if that was to live off a standard Ipod Nano battry im sure it would run non stop for upto or over a month at least before re-charging
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Imagine having an MP3 player with one of these in - & since its uber low power consumption if that was to live off a standard Ipod Nano battry im sure it would run non stop for upto or over a month at least before re-charging
There are other things other than the memory that use up battery life silly. Its a pretty little square/rectangle that we like to call a screen:
__________________that right there is what america needs not legislation not parent groups but some balls and a thick sing.
BLASPHEMY. I need all that times 100!!!!! Along with 1,672 hookers the Original Mr. Pibb and a fully modded TT 2008 G35 coupe.
So could they conjoin this right on the motherboard in the future and max out what the chipset can handle?Also I query how this tech would bring home the bacon on video cards. I don't know how to compare this 1000x flash speed Vs ddr 2,3 and 4.
So could they solder this right on the motherboard in the future and max out what the chipset can handle?Also I wonder how this tech would work on video cards. I don't experience how to compare this 1000x flash go Vs ddr 2,3 and 4.
Yeah and they don't seem to indicate the sizes of the technology so far that leaves me worried that this is a fresh go away like flash technology was with very expensive costs for only 8 MB of storage. Also what comes after GHZ speed for graphics memory is it THZ (Terrahertz)?
__________________that right there is what america needs not legislation not parent groups but some balls and a thick belt.
BLASPHEMY. I be all that times 100!!!!! Along with 1,672 hookers the Original Mr. Pibb and a fully modded TT 2008 G35 coupe.
There are other things other than the memory that use up battery life silly. Its a pretty little square/rectangle that we like to label a check:
not really an air (or a valid point) as there ARE mp3 players available that dont have a screen such as the ipod shuffle series etc& even with a screen the battry life would at least be up to 25% & over longer as the memory itself will draw on less cater unless your totally stoned or have some sorta Hyperactivity Disorder & play with your mp3 player constantly to make it lighten up if that is the case then yeah maybe having low power consumption.
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